{"title":"Denuded-WN/sub x//poly-Si gate technology for deep sub-micron CMOS","authors":"B. Lee, N. Park, S. Han, Kyungho Lee","doi":"10.1109/ICVC.1999.820886","DOIUrl":null,"url":null,"abstract":"We found that RTA of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with the formation of low resistivity W and a highly reliable in situ barrier layer simultaneously. Furthermore, electrical characteristics of the denuded-WN/sub x//poly-Si gate were superior to those of W/WN/sub x//poly-Si gate after selective oxidation and post anneal processes.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"38 1","pages":"225-228"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820886","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We found that RTA of amorphous WN/sub x//poly-Si resulted in denudation of nitrogen atoms with the formation of low resistivity W and a highly reliable in situ barrier layer simultaneously. Furthermore, electrical characteristics of the denuded-WN/sub x//poly-Si gate were superior to those of W/WN/sub x//poly-Si gate after selective oxidation and post anneal processes.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
