Dae-Myeong Geum, Sanghyeon Kim, S. Kim, S. Kang, J. Kyhm, J. Song, W. Choi, E. Yoon
{"title":"Monolithic lntegratIon of GaAs//InGaAs photodetectors for multicolor detection","authors":"Dae-Myeong Geum, Sanghyeon Kim, S. Kim, S. Kang, J. Kyhm, J. Song, W. Choi, E. Yoon","doi":"10.23919/VLSIT.2019.8776526","DOIUrl":null,"url":null,"abstract":"Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.","PeriodicalId":6752,"journal":{"name":"2019 Symposium on VLSI Technology","volume":"1 1","pages":"T248-T249"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIT.2019.8776526","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate for future high-resolution multicolor PDs. At the same time, it covered a broad wavelength range from visible to IR.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
