Byunghak Lee, Sangcheol Kim, Dong-chan Kim, Taewoo Kim, Jungyeol Park, Youngho Choe, Y. Woo, E. Ryou, Jongoh Kim, J. Om
{"title":"The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate","authors":"Byunghak Lee, Sangcheol Kim, Dong-chan Kim, Taewoo Kim, Jungyeol Park, Youngho Choe, Y. Woo, E. Ryou, Jongoh Kim, J. Om","doi":"10.1109/ICVC.1999.820892","DOIUrl":null,"url":null,"abstract":"The dependence of oxide charge-to-breakdown (Q/sub BD/) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q/sub BD/ and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving Q/sub BD/, the RTA/FA annealing sequence is good for improving device degradation.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"79 1","pages":"241-244"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The dependence of oxide charge-to-breakdown (Q/sub BD/) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that Q/sub BD/ and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving Q/sub BD/, the RTA/FA annealing sequence is good for improving device degradation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
