Characterization of copper voids in dual damascene processes

R. Guldi, J. Shaw, J. Ritchison, S. Oestreich, K. Davis, R. Fiordalice
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引用次数: 15

Abstract

The introduction of copper dual Damascene processing into integrated circuits has brought about a host of new defectivity issues, especially those related to pitting and voiding. These defects must be understood and eliminated to achieve competitive manufacturing yields and assure device reliability.
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双大马士革工艺中铜空洞的表征
在集成电路中引入铜双大马士革工艺带来了一系列新的缺陷问题,特别是与点蚀和空洞有关的缺陷问题。必须了解并消除这些缺陷,以实现具有竞争力的制造产量并确保设备的可靠性。
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