Nb1-xO2 based Universal Selector with Ultra-high Endurance (>1012), high speed (10ns) and Excellent Vth Stability

Abstract

In this work, we demonstrate a high performance Nb1-xO2 based selector with thermal feedback mechanism for 3D X-point application. Ultra-high endurance $(> 10^{12})$, high operation speed (10ns), bidirectional operation and excellent Vth stability were achieved. By adding a barrier layer between Nb1-xO2 film and electrode, the off-state leakage current was reduced by one order of magnitude (selectivity as high as 500). This work provides a universal selector solution for various emerging memories, including RRAM, MRAM and PCM.