Ultra-thin <10nm) Dual-oxide (Al2O3/TiO2) Hybrid Device (Memory/Selector) with Extremely Low Ioff <1nA) and Ireset <1nA) for 3D Storage Class Memory

Abstract

We demonstrate ultra-thin ALD-processed dual-oxide (Al2O3/TiO2) hybrid device with memory and selector characteristics by engineering the stability of metal filament in Al2O3 and TiO2 layer. The optimized hybrid memory device shows outstanding performances such as low off current $(< 1\text{nA})$, low reset current $(< 1\text{nA})$, and high on/off ratio $(> 10^{4})$. Inserting a Ti buffer layer which has a low electrode potential value, we observed excellent uniformity and retention property. Finally, an outstanding read/write margins and ultra-low power consumption are confirmed through array simulations of the proposed hybrid memory device.