Electroless Cu seed on Ru and Co liners in high aspect ratio TSV

F. Inoue, H. Philipsen, M. H. van der Veen, S. Van Huylenbroeck, S. Armini, H. Struyf, T. Tanaka
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引用次数: 4

Abstract

High aspect ratio through-silicon vias (3 μm diameter by 50 μm depth) have been filled by standard Cu plating process on electroless deposited (ELD) Cu seed layers on conformal liners of Ru or Co. The in-field Cu overburden that was needed to achieve electrochemical fill on the ELD-Cu seed was 600 nm. This is much lower than would have been needed in a conventional scheme with a PVD-Cu seed (of ~ 1500 nm) and, with that, reduces the Cu CMP time. This work shows the feasibility of Cu electroless as deposition technique in a TSV metallization process.
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高纵横比TSV中Ru和Co衬里化学镀铜
采用标准镀铜工艺,在Ru或Co共形衬里的化学沉积(ELD) Cu种子层上填充了直径为3 μm、深度为50 μm的高纵横比通硅孔,实现电化学填充所需的现场Cu覆盖层为600 nm。这比使用PVD-Cu种子(约1500 nm)的传统方案所需的要低得多,并且减少了Cu CMP时间。本工作表明了化学沉积Cu技术在TSV金属化过程中的可行性。
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