A Thin Adhesive for 3D/2.5D Si Chip Stacking at Low Temperature

Y. Kayaba, Yuzo Nakamura, T. Kozeki, J. Kamada, K. Kohmura
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引用次数: 2

Abstract

The bonding property of a thin adhesive for the high density 3D/2.5D Si chip integration with the Cu-Cu bonding at the low temperature range (150–400 °C) was investigated. The cured thin adhesive is bondable to SiO2 after baking at 150 °C with the high surface energy (6.4 J/m2). By using this adhesive Si chip can be integrated in 3D/2.5D with no thermal sliding and no adhesive protrusion from the chip corner. The reliability test results are also investigated.
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一种用于3D/2.5D硅片低温堆叠的薄胶粘剂
在低温150 ~ 400℃范围内研究了高密度3D/2.5D Si芯片集成用Cu-Cu粘接薄胶粘剂的粘接性能。固化后的薄胶粘剂经150℃烘烤后可与SiO2结合,具有较高的表面能(6.4 J/m2)。采用该胶黏剂,硅片可实现3D/2.5D集成,无热滑动,芯片边角无胶黏剂突出。对可靠性试验结果进行了分析。
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