Experimental investigation of temperature dependent RF performances of RF-CMOS devices

Abstract

This paper presents the degradation of f/sub T/ and f/sub max/ in CMOS devices at elevated temperature. Since MOS transistors in RF applications are usually in saturation region and f/sub T/ of CMOS devices is proportional to g/sub m/, a simple empirical model for temperature dependence of g/sub m/ at any measurement bias has been suggested by considering the temperature dependence of carrier mobility and a saturation velocity simultaneously. From the empirical temperature behavior of g/sub m/, we can predict the enhanced RF performances of CMOS at low temperature.