Two-level MOL and VHV routing style to enable extreme height scaling beyond 2nm technology node

B. Chehab, O. Zografos, E. Litta, Z. Ahmed, P. Schuddinck, D. Jang, G. Hellings, A. Spessot, P. Weckx, J. Ryckaert
{"title":"Two-level MOL and VHV routing style to enable extreme height scaling beyond 2nm technology node","authors":"B. Chehab, O. Zografos, E. Litta, Z. Ahmed, P. Schuddinck, D. Jang, G. Hellings, A. Spessot, P. Weckx, J. Ryckaert","doi":"10.1109/IITC51362.2021.9537557","DOIUrl":null,"url":null,"abstract":"Due to the slowdown in gate pitch scaling linked to fundamental physical limitations, standard cell (SDC) height reduction becomes a key to achieve the scaling targets. In this work, a two-level (2L) middle of line (MOL) scheme based on a forksheet (FSH) device architecture and Vertical-Horizontal-Vertical (VHV) routing style is proposed to achieve 4-Track (4T) SDC template. The proposed architecture achieves 21% higher Power-Performance-Area (PPA) compared to the traditional 5T-HVH FSH architecture with limited additional process complexity and Cost (C).","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Due to the slowdown in gate pitch scaling linked to fundamental physical limitations, standard cell (SDC) height reduction becomes a key to achieve the scaling targets. In this work, a two-level (2L) middle of line (MOL) scheme based on a forksheet (FSH) device architecture and Vertical-Horizontal-Vertical (VHV) routing style is proposed to achieve 4-Track (4T) SDC template. The proposed architecture achieves 21% higher Power-Performance-Area (PPA) compared to the traditional 5T-HVH FSH architecture with limited additional process complexity and Cost (C).
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两级MOL和VHV路由方式,可实现超过2nm技术节点的极端高度缩放
由于基本物理限制导致栅极间距缩放速度减慢,降低标准单元(SDC)高度成为实现缩放目标的关键。在这项工作中,提出了一种基于叉片(FSH)器件架构和垂直-水平-垂直(VHV)路由风格的两级(2L)中线(MOL)方案来实现4轨(4T) SDC模板。与传统的5T-HVH FSH架构相比,该架构的功率性能面积(PPA)提高了21%,同时限制了额外的工艺复杂性和成本(C)。
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