Systematic calibration for transient enhanced diffusion of indium and its application to 0.15-/spl mu/m logic devices

Abstract

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the Si/SiO/sub 2/ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and 0.15-/spl mu/m device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.