D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi
{"title":"Reliability of Barrierless PVD Mo","authors":"D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi","doi":"10.1109/IITC51362.2021.9537545","DOIUrl":null,"url":null,"abstract":"We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO<inf>2</inf>, LK3.0, SiCO and Si<inf>3</inf>N<inf>4</inf> films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO<inf>2</inf>, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si<inf>3</inf>N<inf>4</inf> films.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":"67 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO2, LK3.0, SiCO and Si3N4 films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO2, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si3N4 films.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
