D. Tierno, M. Hosseini, M. H. van der Veen, A. Dangol, K. Croes, S. Demuynck, Z. Tokei, E. Litta, N. Horiguchi
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引用次数: 3
Abstract
We evaluate the reliability of barrierless Mo metallization on various dielectrics that are used in both BEOL and MOL integration schemes. In particular, we assess the risk of metal drift-induced failure in SiO2, LK3.0, SiCO and Si3N4 films by performing TDDB measurements on MIM planar capacitors. We show that Mo does not drift in SiO2, LK3.0, and SiCO. Despite a thoroughly failure analysis no definitive conclusion could be reached for the Si3N4 films.
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