Materials Impact on SRAM Timing: An Ab Initio Study of Interconnects

S. Aboud, T. Gunst, J. Cobb, Joanne Huang, P. Asenov, V. Arcisauskaite
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Abstract

In this work, we demonstrate our first-principles based methodology to include atomistic level simulations to evaluate the promise of different metals on the performance of MOL/BEOL interconnects. The specific metals that we focus on include Cu, Ru (both fcc and hcp), Co, Mo, and W where the conductivity of these metals, including the degradation from grain boundaries is extracted from ab initio simulations, is included in a parasitic field solver and subsequently used to extract the interconnect parasitics of standard cells. PPA is evaluated through simulations of an 128x128 SRAM memory array where we find significant improvement in the read and write delay of 20% and 40%, respectively when we replace M1 with Ru(fcc).
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材料对SRAM时序的影响:互连的从头算研究
在这项工作中,我们展示了我们基于第一性原理的方法,包括原子水平模拟,以评估不同金属对MOL/BEOL互连性能的前景。我们关注的特定金属包括Cu, Ru (fcc和hcp), Co, Mo和W,其中这些金属的电导率,包括晶界的退化,从从头算模拟中提取,包括寄生场求解器,随后用于提取标准电池的互连寄生。通过对128x128 SRAM存储器阵列的模拟来评估PPA,我们发现当我们用Ru(fcc)代替M1时,读写延迟分别显著改善了20%和40%。
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