{"title":"Reduce scrap: control oxide loss in SC1","authors":"Heather Maines, M. Rathmell, L. Veldhuis","doi":"10.1109/ASMC.2002.1001600","DOIUrl":null,"url":null,"abstract":"In this study, we characterize thermal silicon dioxide, plasma enhanced CVD tetraorthosilicate oxide (PECVD TEOS) and phosphorous doped silicate glass (PSG) etch rates in SC1 as a function of temperature and concentration. We also measure the effect of implant screen oxide loss in SC1 on transistor voltage turn on and elucidate ways to reduce scrap due to oxide loss in SC1.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this study, we characterize thermal silicon dioxide, plasma enhanced CVD tetraorthosilicate oxide (PECVD TEOS) and phosphorous doped silicate glass (PSG) etch rates in SC1 as a function of temperature and concentration. We also measure the effect of implant screen oxide loss in SC1 on transistor voltage turn on and elucidate ways to reduce scrap due to oxide loss in SC1.
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