{"title":"Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)","authors":"Jae-Seong Jeong, O. Beom-hoan, Se-Guen Park","doi":"10.1109/ICVC.1999.820958","DOIUrl":null,"url":null,"abstract":"A novel technique, named as \"Enhanced-ICP\", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"273 1","pages":"441-443"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel technique, named as "Enhanced-ICP", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.
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