Sunyoung Kim, Sungwoong Chung, Joo-Han Shin, N. Park, J. K. Kim, J. Park
{"title":"HOSP(R) as a low dielectric material: comparative study against hydrogen silsesquioxane","authors":"Sunyoung Kim, Sungwoong Chung, Joo-Han Shin, N. Park, J. K. Kim, J. Park","doi":"10.1109/ICVC.1999.820882","DOIUrl":null,"url":null,"abstract":"Low-k candidate SOG material HOSP(R) is evaluated and compared to HSQ. Particularly, the chemical nature of the film and the effects of various processing steps were investigated using FTIR, TDS, oscilloscope and stress gauge. The water absorption upon various post etch treatments turned out to be a crucial factor affecting the dielectric properties of the film. HOSP(R) proved to be a dielectric with lower k value compared to the HSQ film but was more vulnerable to moisture uptake.","PeriodicalId":13415,"journal":{"name":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","volume":"37 1","pages":"218-221"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICVC.1999.820882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Low-k candidate SOG material HOSP(R) is evaluated and compared to HSQ. Particularly, the chemical nature of the film and the effects of various processing steps were investigated using FTIR, TDS, oscilloscope and stress gauge. The water absorption upon various post etch treatments turned out to be a crucial factor affecting the dielectric properties of the film. HOSP(R) proved to be a dielectric with lower k value compared to the HSQ film but was more vulnerable to moisture uptake.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
