Atomic layer deposition of RuO2 using a new metalorganic precursor as a diffusion barrier for Ru interconnect

Youn-Hye Kim, Y. Kotsugi, Taehoon Cheon, R. Ramesh, Soo‐Hyun Kim
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Abstract

We report the ALD RuO2 process using a new Ru metalorganic precursor, tricarbonyl (trimethylenemethane) ruthenium [Ru(TMM)(CO)3], and molecular oxygen (O2) as a reactant at the relatively low temperature of 180 °C for a diffusion barrier application of Ru interconnect. RuO2 thin films could be prepared by controlling the reactant and precursor pulsing time ratio (to2/tRu) and the deposition pressure. The formation of RuO2 phase is generally favorable at a higher pulsing time ratio (to2/tRu) and deposition pressure. It was also demonstrated that Ru single, the mixture phase of Ru and RuO2, and RuO2 single phase could be controllably grown with deposition condition. The RuO2 films deposited under optimized pulsing conditions showed resistivity of ~103 μΩ·cm, and a growth rate of ~0.056 nm/cycle with short incubation cycles of ~15 cycles. The diffusion barrier performance of ALD-RuO2 thin films against Ru is analyzed using XRD and electrical impedance analysis. According to both analyses, the non-barrier layer structure [ALD-Ru (50 nm)/Si] began to lose its stability by forming ruthenium silcides at 750 °C, while the structure with a barrier layer [ALD-Ru/ALD-RuO2 (5 nm)/Si] were stable up to 850 °C.
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利用新型金属有机前驱体作为Ru互连扩散屏障的RuO2原子层沉积
我们报道了一种新的Ru金属有机前驱体,三羰基(三甲基乙烷)钌[Ru(TMM)(CO)3]和分子氧(O2)作为反应物,在180℃的相对低温下,用于Ru互连的扩散屏障应用的ALD RuO2工艺。通过控制前驱物与反应物的脉冲时间比(to2/tRu)和沉积压力,可以制备RuO2薄膜。在较高的脉冲时间比(to2/tRu)和沉积压力下,通常有利于RuO2相的形成。实验还表明,随沉积条件的变化,Ru单相、Ru与RuO2的混合相、RuO2单相的生长都是可控的。在优化的脉冲条件下,制备的RuO2薄膜的电阻率为~103 μΩ·cm,生长速率为~0.056 nm/周期,培养周期为~15个周期。采用XRD和电阻抗分析分析了ALD-RuO2薄膜对Ru的扩散阻挡性能。根据两种分析,非势垒层结构[ALD-Ru (50 nm)/Si]在750℃形成硅化钌时开始失去稳定性,而具有势垒层的结构[ALD-Ru/ALD-RuO2 (5 nm)/Si]在850℃时保持稳定。
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