Equipment productivity improvement via inline qualification implementation

N. Lafferty, B. Fiol, P. Jowett, Y. Karzhavin, T. Urenda
{"title":"Equipment productivity improvement via inline qualification implementation","authors":"N. Lafferty, B. Fiol, P. Jowett, Y. Karzhavin, T. Urenda","doi":"10.1109/ASMC.2002.1001607","DOIUrl":null,"url":null,"abstract":"This paper discusses inline etch equipment qualification implementation at the 200 mm Infineon Technologies Richmond fab. Traditional etch equipment qualification requires offline etching of test blanket (or pattern) wafers of known thickness during a defined period. The process etch rate can be calculated using known film thickness and etch time. Data is obtained using an SPC system, which is then used to qualify the tool set. As a part of process control and data acquisition, time of etch is currently being monitored for automatic endpoint steps. The etch time is collected by an equipment integration software package, which communicates directly with the tool and records readings from sensors, step times, and other process conditions. The etch time is then combined with SPC gathered pre etch film thickness to determine an inline, on product, process etch rate. This gives the ability to monitor a chamber's performance without a costly break in the production for purposes of running a test wafer. This also allows instant detection of an out of control (OOC) process and prevents a significant scrap event.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001607","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper discusses inline etch equipment qualification implementation at the 200 mm Infineon Technologies Richmond fab. Traditional etch equipment qualification requires offline etching of test blanket (or pattern) wafers of known thickness during a defined period. The process etch rate can be calculated using known film thickness and etch time. Data is obtained using an SPC system, which is then used to qualify the tool set. As a part of process control and data acquisition, time of etch is currently being monitored for automatic endpoint steps. The etch time is collected by an equipment integration software package, which communicates directly with the tool and records readings from sensors, step times, and other process conditions. The etch time is then combined with SPC gathered pre etch film thickness to determine an inline, on product, process etch rate. This gives the ability to monitor a chamber's performance without a costly break in the production for purposes of running a test wafer. This also allows instant detection of an out of control (OOC) process and prevents a significant scrap event.
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通过在线认证的实施来提高设备的生产效率
本文讨论了英飞凌科技里士满200mm晶圆厂的在线蚀刻设备认证实施。传统的蚀刻设备认证要求在规定的时间内对已知厚度的测试毯(或图案)晶圆进行离线蚀刻。利用已知的薄膜厚度和蚀刻时间,可以计算出工艺蚀刻速率。使用SPC系统获得数据,然后使用该系统对工具集进行鉴定。作为过程控制和数据采集的一部分,目前正在监测蚀刻时间的自动端点步骤。蚀刻时间由设备集成软件包收集,该软件包直接与工具通信,并记录传感器读数、步长和其他工艺条件。然后将蚀刻时间与SPC收集的预蚀刻膜厚度相结合,以确定在线,产品上的工艺蚀刻速率。这使得能够监测腔室的性能,而不会因运行测试晶圆而造成昂贵的生产中断。这也允许即时检测失控(OOC)过程,并防止重大报废事件。
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