C. Putnam, H. Magoon, M. Alam, S. Beaumont, C. Fruga, F. Leung, E. Morita, R. Pierce, N. Roberts
{"title":"Scanner focus and CD response characterization metrology for sub 180 nm lithography","authors":"C. Putnam, H. Magoon, M. Alam, S. Beaumont, C. Fruga, F. Leung, E. Morita, R. Pierce, N. Roberts","doi":"10.1109/ASMC.2002.1001638","DOIUrl":null,"url":null,"abstract":"The rapid pace in scanner technology has produced a situation where many process layers will have to be manufactured with a minimum depth of focus (DOF) of approximately 0.3 um with very stringent critical dimension (CD) control. This paper explores the application of Optical Critical Dimension (formerly called OCD, now MX-SMP) technology to measure and evaluate focus in addition to the CD response across the wafer.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The rapid pace in scanner technology has produced a situation where many process layers will have to be manufactured with a minimum depth of focus (DOF) of approximately 0.3 um with very stringent critical dimension (CD) control. This paper explores the application of Optical Critical Dimension (formerly called OCD, now MX-SMP) technology to measure and evaluate focus in addition to the CD response across the wafer.
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