Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka
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引用次数: 2
Abstract
A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.
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