Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka
{"title":"Low Resistivity Titanium Nitride Thin Film Fabricated by Atomic Layer Deposition on Silicon","authors":"Cheng-Hsuan Kuo, V. Wang, Zichen Zhang, J. Spiegelman, D. Alvarez, A. Kummel, SeongUk Yun, H. Simka","doi":"10.1109/IITC51362.2021.9537463","DOIUrl":null,"url":null,"abstract":"A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A low temperature (300°C–350°C) TiN thermal ALD process using titanium tetrachloride (TiCl4) and anhydrous hydrazine was developed to yield films with resistivities below 200 μohm-cm. Surface treatments such as Ar plasma and atomic hydrogen were applied to further reduce the surface impurities including all halogens. These experiments indicate that minimizing oxygen concentration using an ultra-clean ALD process with minimum background oxidants and high purity precursors are keys in producing TiN thin films with low resistivity.
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