Fei Mo, Yusaku Tagawa, C. Jin, Min-Ju Ahn, T. Saraya, T. Hiramoto, M. Kobayashi
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引用次数: 32
Abstract
We have experimentally demonstrated a ferroelectric HfO2 FET with memory operation by introducing ultrathin IGZO as a channel material. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility with deposited channel material, nearly ideal subthreshold slope, and controllable memory characteristics with the use of back-end compatible process. These results are attributed to the properties of IGZO channel: junctionless FET operation, nearly-zero low-k interfacial layer on metal-oxide channel and good capping effect for realizing ferroelectric phase formation with HfZrO2. IGZO FeFET will open a new path for high-density memory application. Keywords: ferroelectric FET, HfO2, IGZO, memory.
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