Copper Large-Scale Grain Growth by UV Nanosecond Pulsed Laser Annealing

T. Tabata, P. Raynal, F. Rozé, Sebastien Halty, Louis Thuries, F. Cristiano, E. Scheid, F. Mazzamuto
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引用次数: 5

Abstract

UV nanosecond pulsed laser annealing (UV NLA) enables both surface-localized heating and short timescale high temperature processing, which can be advantageous to reduce metal line resistance by enlarging metal grains in lines or in thin films, while maintaining the integrity and performance of surrounding structures. In this work UV NLA is applied on a typical Cu thin film, demonstrating a mean grain size of over 1 μm and 400 nm in a melt and sub-melt regime, respectively. Along with such grain enlargement, film resistivity is also reduced.
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紫外光纳秒脉冲激光退火制备铜晶粒
紫外纳秒脉冲激光退火(UV NLA)既可以实现表面局部加热,也可以实现短时间尺度的高温处理,这有利于通过扩大线或薄膜中的金属晶粒来降低金属线电阻,同时保持周围结构的完整性和性能。在这项工作中,紫外NLA应用于典型的Cu薄膜,在熔融和亚熔融状态下分别显示了超过1 μm和400 nm的平均晶粒尺寸。随着晶粒增大,薄膜电阻率也随之降低。
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