High-speed and Ultra-low Power IoT One-chip (MCU + Connectivity-chip) on a Robust 28-nm Embedded Flash Process

Abstract

Based on robust 28-nm embedded flash (eFlash) process, IoT One-chip for high-speed and low power applications which MCU-chip (10Mb eFlash) and connectivity-chip (BLE/Zigbee) are integrated for the first time. By introducing new devices on 28-nm low-power eFlash process, high-speed ($> 40\text{MHz}$ random read), ultra-low power $(< 3\text{uA}$ sleep mode current, 10/13mA RF current at $\text{Tx}/\text{Rx}$ mode) and robust reliability $(-40\sim 125^{\text{o}}\text{C}$ stable operation, $100\text{K}$ cycle endurance, 150C/RT retention up to 200K hours) are achieved. LDD-first IO transistor with low Vth (~0.5V) for low-Vdd (~1.0V) operation [1] and ultra-low leakage (ULL) SRAM bit-cell (0.1x vs. normal) supporting low sleep mode chip current are applied to extend battery life-time. Stable endurance and high (/low)-temperature retention after cycling stress are achieved by robust split-gate type eFlash cell.