Non-Volatile RRAM Embedded into 22FFL FinFET Technology

2019 Symposium on VLSI Technology Pub Date : 2019-06-01 DOI:10.23919/VLSIT.2019.8776570

O. Golonzka, U. Arslan, P. Bai, M. Bohr, O. Baykan, Yao-Feng Chang, A. Chaudhari, Albert B. Chen, N. Das, C. English, Pulkit Jain, H. Kothari, Blake C. Lin, James S. Clarke, Christopher F. Connor, Tahir Ghani, F. Hamzaoglu, P. Hentges, Christopher J. Jezewski, I. Karpov, Roza Kotlyar, M. Metz, J. O'Donnell, G. OuelletteDaniel, Joodong Park, A. Pirkle, Pedro A. Quintero, D. Seghete, M. Sekhar, A. Gupta, M. Seth, Strutt Nathan, C. Wiegand, Y. H. Jae, Kevin J. Fischer

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引用次数: 40

Abstract

This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and analog support and high design flexibility combined with low manufacturing costs [1]. Embedded RRAM technology presented in this paper achieves 104 cycle endurance combined with 85°C 10-year retention and high die yield. Technology data retention, endurance and yield are demonstrated on 7.2Mbit arrays. We describe device characteristics, bit cell integration into the logic flow, as well as key considerations for achieving high endurance and retention properties.

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非易失性RRAM嵌入22FFL FinFET技术

22FFL是一种高性能、超低功耗的技术，专为移动和射频应用而开发，提供广泛的高压和模拟支持，以及高设计灵活性和低制造成本。本文提出的嵌入式RRAM技术可实现104次循环寿命，并具有85°C的10年保持性和高模具良率。在7.2Mbit阵列上验证了该技术的数据保留、耐用性和成品率。我们描述了器件特性，位元集成到逻辑流中，以及实现高耐用性和保持性能的关键考虑因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 Symposium on VLSI Technology

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