Sun-Ghil Lee, J. Choi, Sangyong Kim, M. Nam, J. Lee, K. Seo, H. Yoon
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引用次数: 0
Abstract
Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.
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