Silver alloy wire bonding

L. Kai, L. Hung, L. Wu, Chiang Yeh Men, D. Jiang, Chun-An Huang, Yu Po Wang
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引用次数: 49

Abstract

In semiconductor packaging, wire bonding is the main technology for electrical connections between chip and leadframe or substrate. Gold wire bonding has the advantages of a fast bonding process, excellent electrical property and stable chemical property. It has been widely used in various electronic packages. Gold prices have been raised significantly over the last few years. Many manufactures have been investigating ways to replace the conventional gold wire with various new materials. Copper wire bonding is an alternative interconnection technology. Cu wire has superior electrical and thermal conductivities as well as higher tensile strength, elongation and better “ball neck” strength. On the other hand, the higher hardness of Cu wire requires higher ultrasonic power and bonding force, which lead to high risk of cratering for ball bonding and tearing for wedge bonding. These will cause some package limitation and wire bonder machine downtime or low units per hour (UPH). Ag alloy wire has low Young's modulus and hardness property. It is a low cost wire bonding solution other than gold wire. In this study, Ag alloy wire is proposed as an alternative to Au bonding wire. Emphasis is placed on the wire bonding workability and reliability of using Ag-Au-Pd alloy wire for TSOP package. Also, wire bonding parameter such as electronic flame off (EFO), bond force, ultrasonic power, heat block temperature and time for ball and wedge bonding are optimized. Furthermore, the response for parameter optimization is determined by the Dage bond tester. Package reliability is determined through environmental tests that include pressure cooker test (PCT), temperature cycle test (TCT) and high temperature storage life test (HTSL). The tested samples were studied by focused ion beam (FIB), scanning electron microscopy (SEM) and energy dispersive spectrometer analyses (EDS). Intermetallic compound growth behavior during reliability test is characterized and compared to Al-Au and Al-Cu systems. Ag-Al didn't have excessive volume variation and void occurrence to get better bonding performance during various reliability tests.
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银合金线焊
在半导体封装中,线键合是芯片与引线框架或基板之间电气连接的主要技术。金线键合具有键合速度快、电性能优异、化学性能稳定等优点。已广泛应用于各种电子封装中。黄金价格在过去几年里大幅上涨。许多制造商一直在研究用各种新材料取代传统金线的方法。铜线键合是另一种互连技术。铜丝具有优良的导电性和导热性,以及较高的抗拉强度、伸长率和较好的“球颈”强度。另一方面,铜丝硬度越高,对超声功率和结合力的要求也越高,这就导致了球键合产生弹孔和楔键合产生撕裂的风险越大。这将导致一些包装限制和线粘合机停机时间或低单位每小时(UPH)。银合金线材具有较低的杨氏模量和硬度。它是一种低成本的金属丝粘接解决方案。在本研究中,提出了银合金丝作为金合金丝的替代品。重点研究了银金钯合金焊丝在TSOP封装中的焊接可加工性和可靠性。并对电子火焰关闭(EFO)、键合力、超声功率、热阻温度和球、楔键合时间等焊线参数进行了优化。此外,参数优化的响应由Dage粘结试验机确定。包装可靠性是通过环境测试来确定的,包括压力锅测试(PCT)、温度循环测试(TCT)和高温储存寿命测试(HTSL)。采用聚焦离子束(FIB)、扫描电镜(SEM)和能谱仪(EDS)对样品进行了研究。研究了金属间化合物在可靠性试验中的生长行为,并与Al-Au和Al-Cu体系进行了比较。在各种可靠性试验中,Ag-Al没有出现过大的体积变化和空隙,获得了较好的粘结性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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Parasitic electrical and electromagnetic effects Heat management Passive electronic components Interconnection technology Reliability and maintainability
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