A study on soft- and hard-breakdowns in MOS capacitors using the parallel stressing method

J. Sim, I. Nam, Sung I. Hong, Jong-Duk Lee, Byung-Gook Park
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Abstract

In this paper, we propose a new experimental technique, namely the parallel stressing method to investigate the breakdown mechanism of MOS capacitors. The SILC characteristics of the region excluding the breakdown spot of a broken-down capacitor can be deduced, utilizing this method. It was shown that HBD as well as SBD takes place locally, as expected. Multiple SBD phenomena at different points on a capacitor have been verified. However, HBD has not occurred multiply, which is thought to be because of the decrease in stress intensity after the event.
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用平行应力法研究MOS电容器的软击穿和硬击穿
本文提出了一种新的实验技术,即平行应力法来研究MOS电容器的击穿机理。利用该方法,可以推导出除击穿点外的区域的硅电阻特性。结果表明,与预期的一样,HBD和SBD都发生在局部。多个SBD现象在不同的点上的电容器已被验证。然而,HBD并没有多次发生,这被认为是由于事件发生后应激强度的降低。
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