Cu-Cu Bonding using Optimized Copper Nitride Passivation for 3D Packaging Applications

H. Park, Seungmin Park, Yoonho Kim, S. Kim
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引用次数: 1

Abstract

3D packaging is able to keep the scaling in semiconductor market. Increased and shorter interconnects achieved by vertical stacking have benefits such as improved performance, reduced signal delay, and small form factor. In order to obtain high-quality 3D packaging applications, the integration of heterogeneous devices through bonding technologies is very important. Low temperature and pressure are essential during the bonding process because most of logic/memory devices has many metal and low-k dielectric layers, which are vulnerable to thermal budget and mechanical stress. Therefore, a small amount of solder with a low melting point is presently used on the top of the copper pillar for mass production. But, solder creates an intermetallic compound with copper at the bonding interface and cannot be applied to fine pitch patterns due to their reflow characteristics. Thus, Cu is emerged as a promising interconnect, but Cu-Cu bonding has few challenges because copper is easily oxidized and has a high melting point. In this paper, copper nitride, which prevents oxidation of the copper surface and promotes low temperature bonding, was studied by two step Ar/N2 plasma treatment. The optimum thickness of copper nitride passivation was derived using the design of experiment. It was also found that the copper nitride layer was almost decomposed at a temperature of 200°C.
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利用优化的氮化铜钝化技术实现3D封装应用中的Cu-Cu键合
3D封装能够保持半导体市场的规模。通过垂直堆叠实现的增加和缩短的互连具有诸如提高性能,减少信号延迟和小尺寸等优点。为了获得高质量的3D封装应用,通过键合技术集成异构器件是非常重要的。在键合过程中,低温和低压是必不可少的,因为大多数逻辑/存储器件具有许多金属和低k介电层,容易受到热预算和机械应力的影响。因此,目前在大规模生产的铜柱顶部使用少量低熔点焊料。但是,焊料在键合界面与铜产生金属间化合物,由于其回流特性,不能应用于细间距图案。因此,铜被认为是一种很有前途的互连材料,但是Cu-Cu键合几乎没有挑战,因为铜容易氧化并且具有高熔点。本文采用两步氩/氮等离子体处理技术,研究了氮化铜在铜表面防止氧化和促进低温键合的性能。通过实验设计,得出了氮化铜钝化的最佳厚度。在200℃的温度下,氮化铜层几乎分解。
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