常规LEC、VCZ和VGF生长InP晶体的比较

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328208

S. Kawarabayashi, M. Yokogawa, A. Kawasaki, R. Nakai

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摘要

比较了常规液体包封法(LEC)、蒸汽压控制法(VCZ)和垂直梯度冷冻法(VGF)对InP晶体生长的影响，重点研究了InP晶体的尺寸和位错密度。对于直径大于3英寸的低位错密度InP晶体生长，VCZ似乎是最有希望的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals

Comparisons are made between conventional liquid encapsulated Czochralski (LEC), vapor pressure-controlled Czochralski (VCZ) and vertical gradient freeze (VGF) for the growth of InP crystals focusing on size and dislocation density. VCZ seems to be the most promising method for low dislocation density InP crystal growth with a diameter of larger than three inches.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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