{"title":"InGaAs/InGaAsP量子阱的相互扩散","authors":"R. Glew","doi":"10.1109/ICIPRM.1993.380718","DOIUrl":null,"url":null,"abstract":"The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"217 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Interdiffusion of InGaAs/InGaAsP quantum wells\",\"authors\":\"R. Glew\",\"doi\":\"10.1109/ICIPRM.1993.380718\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"217 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380718\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380718","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies.<>
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