Z.G. Wang, C.H. Wang, Y.L. Liu, Y. Luo, S. Wan, G.H. Li, L.Y. Lin
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引用次数: 0
摘要
利用光致发光(PL)光谱和Van de Pauw测量研究了掺杂B和共掺杂B - Si的未掺杂Si - lec GaAs晶片的光学和电学性质。所有实验结果表明，硼可以作为受体B/sub as /存在，PL光谱中的1.436和1.317eV波段都与对位缺陷B/sub as /有关。假设1.317eV波段对应于(Si/sub Ga/ -B/sub As/)复辐射复合。
Evidence for the Antisite Defect B/sub As/ in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal
Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.
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