最先进和新兴的STT-MRAM技术的基于物理的紧凑建模框架

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409789

Nuo Xu, Jing Wang, Yang Lu, Hong-hyun Park, Bo Fu, Renyu Chen, W. Choi, D. Apalkov, Sungchul Lee, S. Ahn, Yohan Kim, Yutaka Nishizawa, Keun-Ho Lee, Youngkwan Park, E. Jung

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引用次数: 11

摘要

一个综合紧凑的耦合量子输运与磁动力学的建模框架已经为最先进的和新兴的stt - mram开发。经过数值模拟和实验结果的验证，研究了各种晶体管- mram电池结构的性能和可变性。与传统的stt - mram相比，sot辅助mram在擦除时间上有显着改善。

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Physics-based compact modeling framework for state-of-the-art and emerging STT-MRAM technology

A comprehensive compact modeling framework coupling quantum transport with magnetic dynamics has been developed for state-of-the-art and emerging STT-MRAMs. After validation with numerical simulation and experimental results, various transistor-MRAM cell architectures have been studied for their performance and variability. SOT-assisted MRAMs are found to have significant improvement on Erase time over conventional STT-MRAMs.

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2015 IEEE International Electron Devices Meeting (IEDM)

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