电流注入对P+/ n阱二极管内寄生双极晶体管ESD行为的影响

2023 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2023-03-01 DOI:10.1109/IRPS48203.2023.10118073

Hui Wang, Pengyu Lai, Zhongren Chen

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引用次数: 0

摘要

利用寄生双极结构在一个典型的P+/ n井作为一个额外的静电放电(ESD)路径进行了探索。讨论了横向PNP (LPNP)的优化问题。通过Silvaco进行器件传输线脉冲(TLP)表征和技术计算机辅助设计(TCAD)仿真，研究了lppp器件的独立ESD性能以及基极电流注入对寄生双极晶体管ESD行为的影响。

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Current Injection Effect on ESD Behaviors of the Parasitic Bipolar Transistors inside P+/N-well diode

The utilization of parasitic bipolar structures inside a typical P+/N-well as an additional electrostatic discharge (ESD) path is explored. The optimization on the lateral PNP (LPNP) is discussed. Device transmission line pulse (TLP) characterizations and technology computer aided design (TCAD) simulations by Silvaco have been performed to investigate the stand-alone LPNP ESD performance and effects of the base current injection on ESD behaviors of parasitic bipolar transistors.

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2023 IEEE International Reliability Physics Symposium (IRPS)

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