单悬浮InGaAs纳米线mosfet

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409808

C. Zota, L. Wernersson, E. Lind

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引用次数: 17

摘要

我们报道了In0.85Ga0.15As nwfet利用单个悬浮(在衬底之上)选择性生长的纳米线作为沟道。在VDS = 0.5 V和LG = 60 nm时，这些器件的gm = 3.3 mS/μm，亚阈值斜率SS = 118 mV/dec。这是所有mosfet和hemt的最高gm值，以及开关性能的强大组合，Q = gm/SS = 28，非平面III-V mosfet的最高值。

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Single suspended InGaAs nanowire MOSFETs

We report on In_0.85Ga_0.15As NWFETs utilizing a single suspended (above the substrate) selectively grown nanowire as the channel. These devices exhibit g_m = 3.3 mS/μm and subthreshold slope SS = 118 mV/dec, both at V_DS = 0.5 V and L_G = 60 nm. This is the highest reported value of gm for all MOSFETs and HEMTs, as well as a strong combination of on and off performance, with Q = g_m/SS = 28, the highest for non-planar III-V MOSFETs.

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2015 IEEE International Electron Devices Meeting (IEDM)

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