{"title":"叠栅结构BSI图像传感器光学性能研究","authors":"Yun-Wei Cheng, T. Tsai, Chun-Hao Chou, Kuo-cheng Lee, Hsin-Chi Chen, Yung-Lung Hsu","doi":"10.1109/IEDM.2015.7409801","DOIUrl":null,"url":null,"abstract":"Stacked grid structure is implemented into back-side illumination (BSI) image sensors and device performance for various grid design including dimension and height has been investigated. Simulated angular response shows less quantum efficiency (QE) degradation in large incident angle and SNR-10 has a ~10% improvement for devices with stacked grid structure.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Optical performance study of BSI image sensor with stacked grid structure\",\"authors\":\"Yun-Wei Cheng, T. Tsai, Chun-Hao Chou, Kuo-cheng Lee, Hsin-Chi Chen, Yung-Lung Hsu\",\"doi\":\"10.1109/IEDM.2015.7409801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Stacked grid structure is implemented into back-side illumination (BSI) image sensors and device performance for various grid design including dimension and height has been investigated. Simulated angular response shows less quantum efficiency (QE) degradation in large incident angle and SNR-10 has a ~10% improvement for devices with stacked grid structure.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409801\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical performance study of BSI image sensor with stacked grid structure
Stacked grid structure is implemented into back-side illumination (BSI) image sensors and device performance for various grid design including dimension and height has been investigated. Simulated angular response shows less quantum efficiency (QE) degradation in large incident angle and SNR-10 has a ~10% improvement for devices with stacked grid structure.