采用超高密度纳米铜丝的新型晶圆间(W2W)混合键合技术,实现百亿亿级2.5D/3D集成

K. Lee, C. Nagai, J. Bea, T. Fukushima, R. Suresh, X. Wu, T. Tanaka, M. Koyanagi
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引用次数: 6

摘要

为了解决当前标准芯片到晶圆(C2W)/晶圆到晶圆(W2W)混合键合技术的关键问题,我们提出了一种新的重新配置的晶圆到晶圆(W2W)混合键合技术,该技术使用三种具有微挤压结构的缩放微小电极和独特的粘合层,用于超高密度2.5D/3D集成应用。特别是,我们开发了一种高堆叠良率的混合键合技术,该技术采用独特的由超高密度纳米铜丝组成的各向异性导电膜,用于百亿亿次2.5D/3D集成。采用芯片自组装和晶圆级热压缩键合的方法,实现了7mm × 23mm尺寸的多个TEG芯片同时对准,精度在1um左右。在TEG芯片中,4309,200个直径为3um /间距为6um的电极中,有3,898,000个电极采用超高密度纳米铜丝混合键合技术完整地连接在一起,连接率达到90%。
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Novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using ultra-high density nano-Cu filaments for exascale 2.5D/3D integration
In order to solve the critical issues of current standard chip-to-wafer (C2W)/wafer-to-wafer (W2W) hybrid bonding technologies, we propose novel reconfigured wafer-to-wafer (W2W) hybrid bonding technology using three types of scaled tiny electrodes with slightly extruded structure and unique adhesive layers for ultra-high density 2.5D/3D integration applications. Especially, we developed a high stacking yield hybrid bonding technology using unique anisotropic conductive film composed of ultra-high density nano-Cu filaments for exascale 2.5D/3D integration. Multi numbers of TEG die with 7mm × 23mm size are simultaneously aligned with high accuracy around 1um by chip self-assembly method and thermal-compression bonding in wafer-level. Totally 3,898,000 of 4,309,200 electrodes with 3um diameter/6um pitch in each TEG chip are well intact-bonded by new hybrid bonding technology using ultra-high density nano-Cu filaments which gives rise to the joining yield of 90%.
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