A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol
{"title":"化学束外延生长的InP/GaAs/GaP/GaAs短周期超晶格","authors":"A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol","doi":"10.1109/ICIPRM.1993.380577","DOIUrl":null,"url":null,"abstract":"The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy\",\"authors\":\"A. Freundlich, A. Bensaoula, A. Bensaoula, V. Rossignol\",\"doi\":\"10.1109/ICIPRM.1993.380577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP/GaAs/GaP/GaAs short period superlattices grown by chemical beam epitaxy
The growth of a new type of pseudomorphically strained layer superlattice is investigated. InP(n)/GaAs(m)/GaP(n)/GaAs(m) superlattices with n=1 to 4 monolayers and m=4 to 40 monolayers were grown using chemical beam epitaxy on GaAs substrates. Perfectly strain balanced InP(n)/GaAs(m)/GaP(n)/ GaAs(m) superlattices with n=4 monolayers were realized. The global mismatch introduced by 50 period In(4)/GaAs(4)/GaP(4)/GaAs(4) superlattices is below 2/spl times/10/sup -3/ and superlattice satellite peaks are clearly observed in the diffraction patterns, demonstrating that chemical beam epitaxy is perfectly suited for realization of such strain balanced short superlattices.<>
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