Sung Hwan Kim, C. Oh, Y. L. Choi, Sung I. Hong, N. Kim, H. Bae, Sung-Han Kim, H. Park, J. Yoon, I. Park, Dong-Won Kim, Donggun Park, B. Ryu
{"title":"在ono - Silicon-On-ONO (SOONO)衬底上实现高度可制造的TiN金属栅极纳米棒晶体管","authors":"Sung Hwan Kim, C. Oh, Y. L. Choi, Sung I. Hong, N. Kim, H. Bae, Sung-Han Kim, H. Park, J. Yoon, I. Park, Dong-Won Kim, Donggun Park, B. Ryu","doi":"10.1109/IEDM.2006.346927","DOIUrl":null,"url":null,"abstract":"In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for nMOS and 1.0 mA/mum for pMOS are achieved at Ioff=100 nA/mum and VD =1.0 V. Thus, it is proven that laterally and vertically scaled nanorod transistors can be a promising solution for ultimate scaling","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly Manufacturable TiN Metal Gate Nanorod Transistors Realized on Silicon-On-ONO (SOONO) Substrate\",\"authors\":\"Sung Hwan Kim, C. Oh, Y. L. Choi, Sung I. Hong, N. Kim, H. Bae, Sung-Han Kim, H. Park, J. Yoon, I. Park, Dong-Won Kim, Donggun Park, B. Ryu\",\"doi\":\"10.1109/IEDM.2006.346927\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for nMOS and 1.0 mA/mum for pMOS are achieved at Ioff=100 nA/mum and VD =1.0 V. Thus, it is proven that laterally and vertically scaled nanorod transistors can be a promising solution for ultimate scaling\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346927\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346927","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly Manufacturable TiN Metal Gate Nanorod Transistors Realized on Silicon-On-ONO (SOONO) Substrate
In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivability DIBLs are below 40 mV/V and subthreshold swings are nearly ideal values showing no temperature dependency. The driving currents of 1.4 mA/mum for nMOS and 1.0 mA/mum for pMOS are achieved at Ioff=100 nA/mum and VD =1.0 V. Thus, it is proven that laterally and vertically scaled nanorod transistors can be a promising solution for ultimate scaling
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