用于高导热微电子成型化合物的耐湿氮化铝填料

1996 Proceedings 46th Electronic Components and Technology Conference Pub Date : 1996-05-28 DOI:10.1109/ECTC.1996.517410

A. A. Gallo, C. Bischof, K. Howard, S. D. Dunmead, S. A. Anderson

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引用次数: 10

摘要

一种专利的抗湿氮化铝填料已开发用于高导热微电子成型化合物。基于联苯树脂和使用这种填料的成型化合物具有高导热性(4.5 W/mK)、低热膨胀系数(16 ppm //spl℃)、良好的流动性、高强度、适度的磨损和可与标准熔融二氧化硅系统媲美的设备可靠性。利用瞬态热应力对TO220器件进行的有限元分析表明，假设氮化铝成型化合物为3.2 W/mK， θ ja和θ jc分别降低了约41%和64%。用ECN基成型化合物(3.4 W/mK)成型的208铅PQFP(无散热器)的实验热测量结果显示，Theta ja降低了21%，Theta jc降低了61%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Moisture resistant aluminum nitride filler for high thermal conductivity microelectronic molding compounds

A patented moisture resistant aluminum nitride filler has been developed for use in high thermal conductivity microelectronic molding compounds. Molding compounds based on biphenyl resin and using this filler show high thermal conductivity (4.5 W/mK), low coefficient of thermal expansion (16 ppm //spl deg/C), good flowability, high strength, moderate abrasion, and device reliability comparable to standard fused silica systems. Finite Element Analysis of a TO220 device using transient thermal stress shows approximately a 41% and 64% reduction respectively for Theta ja and Theta jc, assuming an aluminum nitride molding compound of 3.2 W/mK. Experimental thermal measurements on a 208 lead PQFP (no heat sink) molded with an ECN based molding compound (3.4 W/mK) yielded a 21% reduction in Theta ja and a 61% reduction in Theta jc.

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