Influences of external parameters on low pressure MOVPE growth results of InP based materials

The optimization of growth parameters for uniform deposition of GaInAs(P) compounds on InP has been topic of many reactor design studies up to the present. In most cases geometrical design provided optimization for only one of the compositional spectrum range of the Ga-In-As-P material family. The approaches were to compensate thermal distribution nonuniformities on the susceptors. These particularly cause compositional nonuniformities related to the temperature dependence in Ga/In or As/P distribution coefficients. This study was performed to get insight into the kinetic and transport processes in MOVPE reactors to have a general improvement for the entire material group of the InP based compound materials.<>