利用化学氧化物和优化后退火，改进了n/sup +/多晶硅栅极的ALD HfO/ sub2 /和Hf-Al-O的薄膜生长和平带电压控制

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015401

G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. V. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. Hergenrother

{"title":"利用化学氧化物和优化后退火，改进了n/sup +/多晶硅栅极的ALD HfO/ sub2 /和Hf-Al-O的薄膜生长和平带电压控制","authors":"G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. V. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. Hergenrother","doi":"10.1109/VLSIT.2002.1015401","DOIUrl":null,"url":null,"abstract":"We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":"{\"title\":\"Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing\",\"authors\":\"G. Wilk, M. Green, M. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. V. van Dover, A. Kornblit, T. Gustafsson, E. Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. Hergenrother\",\"doi\":\"10.1109/VLSIT.2002.1015401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"26\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 26

摘要

我们首次证明，与热氧化物相比，化学氧化下层/spl sim/5 /spl Aring/ thick提供了更好的ALD HfO/sub 2/薄膜的生长和平带电压控制。结果表明，优化后的退火条件大大降低了高/spl kappa/堆叠中的固定电荷和界面氧化物的生长。实现了<30 mV的极小的平坦带电压位移，对应于非常低的固定电荷Q/sub / f/ spl sim/2E11/cm/sup /。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Improved film growth and flatband voltage control of ALD HfO/sub 2/ and Hf-Al-O with n/sup +/ poly-Si gates using chemical oxides and optimized post-annealing

We demonstrate for the first time that chemical oxide underlayers /spl sim/5 /spl Aring/ thick provide improved growth and flatband voltage control of ALD HfO/sub 2/ films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-/spl kappa/ stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Q/sub f//spl sim/2E11/cm/sup 2/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

自引率

0.00%

发文量