The applications of nanotechnology in electronic devices

Nanometre-scale lithography allows transistors to be fabricated with excellent potential for performance above 100 GHz. Whether this performance is realised depends on the detailed construction of the device. Control of these details requires a 'total nanotechnology' approach to device fabrication which also offers right-first-time design of high performance circuits and predictable yield provided good physical forecasting tools become available for HEMTs. One may also use this approach to realise new device structures for specific applications. In this paper I want to show that the realisation of high performance sub-100 nm gate transistors demands semiconductor nanotechnology of the highest quality; and how that technology might be used to realise right-first-time, manufacturable systems.<>