A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol
{"title":"外延生长InP外延晶片的评价","authors":"A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol","doi":"10.1109/ICIPRM.1993.380659","DOIUrl":null,"url":null,"abstract":"The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"85 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Evaluation of InP Epi-ready wafers for epitaxial growth\",\"authors\":\"A. Overs, G. Jacob, M. Besland, V. Drouot, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, J. Benchimol\",\"doi\":\"10.1109/ICIPRM.1993.380659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"85 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of InP Epi-ready wafers for epitaxial growth
The authors report on new X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) characterization results obtained on Epi-ready InP wafers as prepared with an optimized process and then stored in air for more than six months. They present a simplified molecular beam epitaxy oxide desorption procedure adapted to the new products. The quality of this procedure is demonstrated by the high performance of InAlAs/InGaAs high electron mobility transistor structures. The properties of the epitaxial structures prepared with different growth techniques are evaluated on the basis of secondary ion mass spectrometry results for residual impurities at epilayer-substrate interfaces.<>
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