高频基高k介电材料作为电荷阱nvm存储层的深入研究

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.347010

J. Buckley, M. Bocquet, G. Molas, M. Gely, P. Brianceau, N. Rochat, E. Martinez, F. Martin, H. Grampeix, J. Colonna, A. Toffoli, V. Vidal, C. Leroux, G. Ghibaudo, G. Pananakakis, C. Bongiorno, D. Corso, S. Lombardo, B. Desalvo, S. Deleonibus

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引用次数: 12

摘要

本文将不同的hf基氧化物(HfO2，不同退火条件下的HfSiO，不同成分的HfSiON, HfAlO)同时视为电荷阱存储器的存储层。基于材料特性分析、存储单元的电学数据、电荷阱器件的物理建模，我们证明了存储层的晶体结构与存储性能之间存在着严格的关系。所得结果清楚地显示了HfO2介电介质作为未来类nrom存储器件的可能存储层的高度兴趣

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs

In this paper, different Hf-based oxides (HfO2, HfSiO under several annealing conditions, HfSiON, HfAlO with various compositions) are simultaneously considered as storage layers of charge-trap memories. Based on material characterization analyses, electrical data of memory cells, physical modeling of charge-trap devices, we show that a strict relationship exists between the crystal structure of the storage layer and the memory performances. The obtained results clearly demonstrate the high interest of HfO2 dielectric as possible storage layer of future NROM-like memory devices

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2006 International Electron Devices Meeting

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