T. Brenner, R. Dall' Ara, C. Holtmann, P. Besse, H. Melchior
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引用次数: 2
摘要
本文报道了集成无源波导的工作频率为/spl λ / = 1.3 /spl mu/m的InGaAsP/InP行波光放大器的实现。该制造基于两级低压金属有机气相外延(LP-MOVPE)，使用薄蚀刻停止层，易于制造和高再现性。光放大器与无源波导对接，使得放大器接口耦合效率高达90%以上，接口反射率低于5 /spl倍/ 10/sup -6/。单通光纤增益分别为+17 dB (TE)和+6 dB (TM)，饱和输出功率为-3.8 dBm。
High gain low reflectivity travelling wave semiconductor optical amplifiers integrated with passive waveguides operating at 1.3 /spl mu/m wavelength
The authors report here the realization of InGaAsP/InP traveling wave optical amplifiers operating at /spl lambda/ = 1.3 /spl mu/m integrated with passive waveguides. The fabrication is based on two stage low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) using thin etch-stop layers for easy fabrication and high reproducibility. The optical amplifiers are butt-jointed to the passive waveguides leading to high amplifier interface coupling efficiencies of over 90% and interface reflectivities below 5 /spl times/ 10/sup -6/. Single pass fiber-fiber gains of +17 dB (TE) and +6 dB (TM) with high saturation output power of -3.8 dBm were achieved.<>
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