超低功耗CMOS电路的单事件效应

M. C. casey, B. Bhuva, S.A. Nation, O. Amusan, T. D. Loveless, L. Massengill, M. C. casey, D. McMorrow, J. Melinger
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引用次数: 15

摘要

在亚阈值区域内工作电路是降低总功耗的一种简单方法。较低的电源电压减少了设备中存在的电场(导致较低的电荷收集),但增加了去除电荷所需的时间。通过单事件的双光子吸收实验对这两种竞争机制进行了表征,表明单事件脆弱性在亚阈值区域不像预期的那样与电源电压呈线性关系。单事件特性是在环振荡器中使用高谐波振荡进行的,环振荡器具有大范围的电源电压范围内的大量级。
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Single-event effects on ultra-low power CMOS circuits
Operating circuits in the subthreshold region is a simple method to lower total power consumption. The lower supply voltages decrease the electric fields present in the devices (resulting in lower charge collection), but increase the time required to remove the charge. These two competing mechanisms are characterized through two-photon absorption experiments for single-events to show that single-event vulnerability does not show a linear relationshiop with power supply voltage, as would be expected, in the subthreshold region. Single-event characterization is carried out using higher harmonic oscillation in ring oscillators with large numbers of stages over a wide range of supply voltages.
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