浮门闪存中复杂随机电报信号引起的异常大阈值电压波动

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346821

N. Tega, Hiroshi Miki, T. Osabe, A. Kotabe, K. Otsuga, Hideaki Kurata, Shiro Kamohara, Kenji Tokami, Yoshihiro Ikeda, Renichi Yamada

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引用次数: 92

摘要

研究了浮动门(FG)闪存中随机电报信号(RTS)引起的阈值电压波动(DeltaVth)。通过对DeltaVth的统计分析，我们发现在DeltaVth分布的高比例区域有一个异常大的DeltaVth，这是由复杂的RTS引起的。由于向隧道氧化物注入电荷增加了复合RTS在RTS中的比例，因此在程序/擦除(P/E)循环后，δ avth分布的色散增加。由于复杂的RTS比简单的RTS要大得多，复杂的RTS成为大容量闪存的可靠性问题之一，特别是在市盈率周期之后

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Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory

A threshold voltage fluctuation (DeltaVth) due to random telegraph signal (RTS) in a floating-gate (FG) flash memory was investigated. From statistical analysis of the DeltaVth, we found an anomalously large DeltaVth at high percentage region of the DeltaVth distribution, which is caused by a complex RTS. Since the ratio of the complex RTS among the RTS is increased by charge injection to tunnel oxide, the dispersion of the DeltaVth distribution increases after program/erase (P/E) cycle. Since the DeltaVth due to the complex RTS is much larger than the simple RTS, the complex RTS become one of the reliability issues in larger capacity flash memory, especially after P/E cycle

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2006 International Electron Devices Meeting

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