Han-Su Kim, K. Chong, Yahong Xie, M. Devincentis, T. Itoh, A. Becker, K. Jenkins
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A porous Si based novel isolation technology for mixed-signal integrated circuits
A novel isolation technology for RF applications based on semi-insulating porous Si (PS) is demonstrated. RF cross-talk isolation of 70 dB at 2 GHz and -45 dB at 8 GHz has been demonstrated using PS trenches that provide complete isolation between neighboring regions of a p/sup +/ Si chip. On-chip spiral inductors of 6 nH fabricated over the PS regions have been demonstrated with Q/sub max/ /spl sim/29 at 7 GHz and a resonant frequency of over 20 GHz.
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