Yun-Hsueh Chuang, Shao-Hua Lee, Chien-Feng Lee, S. Jang, M. Juang
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引用次数: 4
摘要
提出了一种新的用于射频工作的压控振荡器(VCO)拓扑结构。低相位噪声差分CMOS压控振荡器采用负导晶体管栅极和源极之间的电容退化和变压器耦合。采用正反馈的片上变压器增加了谐振腔内的电压摆幅，改善了相位噪声。该VCO可在2.85 GHz至3.35 GHz范围内调谐，调谐范围为16%，采用0.18 μ m CMOS技术制造。工作频率为3ghz时，测量到1mhz偏移时的相位噪声为-119 dBc/Hz。该电路从1.8V电源提取10 mA
A New CMOS VCO Topology with Capacitive Degeneration and Transformer Feedback
This paper presents a new voltage controlled oscillator (VCO) topology for radio frequency operation. The low phase noise differential CMOS VCO uses capacitive degeneration and transformer coupling between the gate and source of the negative conductance transistor. An on chip transformer in positive feedback is used to increase the voltage swing in resonator and to improve the phase noise. The VCO is tunable from 2.85 GHz to 3.35 GHz with 16% tuning range, and has been fabricated with 0.18mum CMOS technology. The measured phase noise at 1 MHz offset is -119 dBc/Hz at the operation frequency of 3 GHz. The circuit draws 10 mA from a 1.8V supply
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