K. Ikegami, H. Noguchi, S. Takaya, C. Kamata, M. Amano, K. Abe, K. Kushida, E. Kitagawa, T. Ochiai, N. Shimomura, D. Saida, A. Kawasumi, H. Hara, J. Ito, S. Fujita
{"title":"基于热稳定因子MTJ的“常关处理器”设计了垂直MTJ,基于2T-2MTJ单元的L2缓存,基于1T-1MTJ单元的L3和最后一级缓存以及新颖的错误处理方案","authors":"K. Ikegami, H. Noguchi, S. Takaya, C. Kamata, M. Amano, K. Abe, K. Kushida, E. Kitagawa, T. Ochiai, N. Shimomura, D. Saida, A. Kawasumi, H. Hara, J. Ito, S. Fujita","doi":"10.1109/IEDM.2015.7409762","DOIUrl":null,"url":null,"abstract":"MTJ-based cache memory is expected to reduce processor power significantly. However, write energy increases rapidly for high speed operation and considered not suited for lower level cache memory. In this work, we have developed L2 and L3 cache memory based on thermal stability factor engineered pMTJ with 2T-2MTJ and 1T-1MTJ memory cell and novel error handling scheme. These techniques reduce 75% energy with 2% performance overhead compared to SRAM-based l2 and L3 cache memory.","PeriodicalId":336637,"journal":{"name":"2015 IEEE International Electron Devices Meeting (IEDM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"MTJ-based \\\"normally-off processors\\\" with thermal stability factor engineered perpendicular MTJ, L2 cache based on 2T-2MTJ cell, L3 and last level cache based on 1T-1MTJ cell and novel error handling scheme\",\"authors\":\"K. Ikegami, H. Noguchi, S. Takaya, C. Kamata, M. Amano, K. Abe, K. Kushida, E. Kitagawa, T. Ochiai, N. Shimomura, D. Saida, A. Kawasumi, H. Hara, J. Ito, S. Fujita\",\"doi\":\"10.1109/IEDM.2015.7409762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MTJ-based cache memory is expected to reduce processor power significantly. However, write energy increases rapidly for high speed operation and considered not suited for lower level cache memory. In this work, we have developed L2 and L3 cache memory based on thermal stability factor engineered pMTJ with 2T-2MTJ and 1T-1MTJ memory cell and novel error handling scheme. These techniques reduce 75% energy with 2% performance overhead compared to SRAM-based l2 and L3 cache memory.\",\"PeriodicalId\":336637,\"journal\":{\"name\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2015.7409762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2015.7409762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MTJ-based "normally-off processors" with thermal stability factor engineered perpendicular MTJ, L2 cache based on 2T-2MTJ cell, L3 and last level cache based on 1T-1MTJ cell and novel error handling scheme
MTJ-based cache memory is expected to reduce processor power significantly. However, write energy increases rapidly for high speed operation and considered not suited for lower level cache memory. In this work, we have developed L2 and L3 cache memory based on thermal stability factor engineered pMTJ with 2T-2MTJ and 1T-1MTJ memory cell and novel error handling scheme. These techniques reduce 75% energy with 2% performance overhead compared to SRAM-based l2 and L3 cache memory.